Atomic layer deposition of Al2O3 process emissions
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چکیده
منابع مشابه
Epitaxial graphene surface preparation for atomic layer deposition of Al2O3
Atomic layer deposition was employed to deposit relatively thick ( 30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide. Ex situ surface conditioning by a simple wet chemistry treatment was used to render the otherwise chemically inert graphene surface more amenable to dielectric deposition. The...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2015
ISSN: 2046-2069
DOI: 10.1039/c4ra14568b